TUNABLE UV-FLASH KRYPTON LAMP ARRAY USEFUL FOR LARGE-AREA DEPOSITION AND IN-SITU UV ANNEALING OF SI-BASED DIELECTRICS

被引:19
作者
FLICSTEIN, J [1 ]
VITEL, Y [1 ]
DULAC, O [1 ]
DEBAUCHE, C [1 ]
NISSIM, YI [1 ]
LICOPPE, C [1 ]
机构
[1] UNIV PARIS 06,PLASMA DENSES LAB,F-75252 PARIS 05,FRANCE
关键词
D O I
10.1016/0169-4332(94)00458-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A low pressure VUV flashlamp at 100 Torr has been developed as a tool for 'cold' UV CVD and processing. The current density is related in a tunable fashion to the VUV spectral distribution (160-260 nm) up to 20 Hz. A high brightness (3400 W/Hz cm(2) sr) Kr flashtube was shown to be a superior VUV source to Xe and Ar for Si-based dielectrics. The VUV efficiency of the Kr flashlamp, operated at up to 10 kA/cm(2), is relatively high, up to 10%, in the spectral region. By setting four efficient Kr flashtubes, in a separate cavity, a lamp source, together with the UV CVD system characteristics, are shown useful to overall 'cold' processing, with focus on uniform large area, cleaning, and in situ deposition, up to 3% for 3 ''. The deposition rates are conveniently high, similar to 100 Angstrom/min at 350 degrees C, but well controllable to obtain several dielectric thin films on m-V materials: silicon dioxide, nitridised silicon dioxide, and silicon nitride. Device quality electrical and optical features for III-V technology are demonstrated: a zero-hysteresis MIS-InP and as a proof of the passivation of GaAs surface, the MIS-GaAs capacitor.
引用
收藏
页码:286 / 293
页数:8
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