INGAASP-INP AVALANCHE PHOTO-DIODE PREPARED BY ZN-DIFFUSION

被引：14

作者：

TAKANASHI, Y

HORIKOSHI, Y

机构：

[1] Musashino Electrical Communication Laboratory, N.T.T.

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 08期

关键词：

D O I：

10.1143/JJAP.18.1615

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：1615 / 1616

页数：2

共 11 条

[1]

BACKMANN KJ, 1978, APPL PHYS LETT, V32, P466

[2] QUATERNARY ALLOY INXGA1-XASYP1-Y-INP PHOTODETECTORS [J].

CLAWSON, AR ;

LUM, WY ;

MCWILLIAMS, GE ;

WIEDER, HH .

APPLIED PHYSICS LETTERS, 1978, 32 (09) :549-553

[3] LIQUID-PHASE EPITAXIAL-GROWTH OF LATTICE-MATCHED INGAASP ON (100)-INP FOR 1.15-1.31-MU-M SPECTRAL REGION [J].

FENG, M ;

WINDHORN, TH ;

TASHIMA, MM ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1978, 32 (11) :758-761

[4] NEW LIQUID-PHASE EPITAXIAL-GROWTH METHOD FOR GROWTH OF (ALGA)AS, GAAS MULTILAYERS [J].

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (05) :887-888

[5] GAINASP-INP AVALANCHE PHOTO-DIODES [J].

HURWITZ, CE ;

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :487-489

[6] ION-IMPLANTED INGAASP AVALANCHE PHOTO-DIODE [J].

LAW, HD ;

TOMASETTA, LR ;

NAKANO, K .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :920-922

[7] GA0.47IN0.53AS HOMOJUNCTION PHOTO-DIODE - NEW AVALANCHE PHOTODETECTOR IN NEAR-INFRARED BETWEEN 1.0 AND 1.6 MU-M [J].

PEARSALL, TP ;

PAPUCHON, M .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :640-642

[8]

STILLMAN YE, 1978, SEMICONDUCTORS SEMIM, V12, P291

[9] INGAASP-INP AVALANCHE PHOTO-DIODE [J].

TAKANASHI, Y ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) :2065-2066

[10] HIGH-EFFICIENCY IN1-XGAXASYP1-Y-INP PHOTODETECTORS WITH SELECTIVE WAVELENGTH RESPONSE BETWEEN 0.9 AND 1.7 MUM [J].

WASHINGTON, MA ;

NAHORY, RE ;

POLLACK, MA ;

BEEBE, ED .

APPLIED PHYSICS LETTERS, 1978, 33 (10) :854-856

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