BORON-NITRIDE AND SILICON BORON-NITRIDE FILM AND POLISH CHARACTERIZATION

被引：11

作者：

NEUREITHER, B

BASA, C

SANDWICK, T

BLUMENSTOCK, K

机构：

[1] IBM CORP,TECHNOL PROD,HOPEWELL JCT,NY 12533

[2] SIEMENS AG,DIV SEMICOND,D-93049 REGENSBURG,GERMANY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 12期

关键词：

D O I：

10.1149/1.2221134

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A (silicon) boron nitride deposition process based on diborane and ammonia chemistry has been developed. Stable (silicon) boron nitride films have been obtained and the film properties were characterized. The mechanical resistance of boron nitride films against abrasives is utilized for stop layer applications for chemical mechanical polishing. The effectiveness of stop layers can be enhanced by end point detection systems. Two different systems will be discussed.

引用

页码：3607 / 3611

页数：5

共 10 条

[1] PREPARATION, PROPERTIES AND APPLICATIONS OF BORON-NITRIDE THIN-FILMS [J].

ARYA, SPS ;

DAMICO, A .

THIN SOLID FILMS, 1988, 157 (02) :267-282

[2]

COTE WJ, 1991, 322 RES DISCL

[3]

Davarik B., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P61, DOI 10.1109/IEDM.1989.74228

[4]

Kaanta C. W., 1991, 1991 Proceedings. Eighth International IEEE VLSI Multilevel Interconnection Conference (Cat. No.91TH0359-0), P144, DOI 10.1109/VMIC.1991.152978

[5] A LOW-PERMISSIVITY INTERCONNECTION USING AN SIBN INTERLAYER [J].

MAEDA, M ;

MAKINO, T ;

YAMAMOTO, EI ;

KONAKA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1610-1614

[6] LOW DIELECTRIC-CONSTANT AMORPHOUS SIBN TERNARY FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION [J].

MAEDA, M ;

MAKINO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (05) :660-665

[7]

MILLER GL, Patent No. 5081421

[8]

MIYAMOTO H, 1983, JPN J APPL PHYS, V22, P216

[9]

NGUYEN S, COMMUNICATION

[10] IMPROVEMENTS OF STRESS CONTROLLABILITY AND RADIATION-RESISTANCE BY ADDING CARBON TO BORON-NITRIDE [J].

YAMADA, M ;

NAKAISHI, M ;

SUGISHIMA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (07) :2242-2246

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