LOW DIELECTRIC-CONSTANT AMORPHOUS SIBN TERNARY FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION

被引:22
作者
MAEDA, M [1 ]
MAKINO, T [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1987年 / 26卷 / 05期
关键词
D O I
10.1143/JJAP.26.660
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:660 / 665
页数:6
相关论文
共 23 条
[1]   CHEMICAL-DEPOSITION OF BORON-NITROGEN FILMS [J].
ADAMS, AC ;
CAPIO, CD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :399-405
[2]   OPTICAL PROPERTIES OF THIN BORON NITRIDE FILMS [J].
BARONIAN, W .
MATERIALS RESEARCH BULLETIN, 1972, 7 (02) :119-&
[3]   HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES [J].
CHOW, R ;
LANFORD, WA ;
WANG, KM ;
ROSLER, RS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5630-5633
[4]  
Colthup N. B., 1975, INTRO INFRARED RAMAN, P311
[5]   MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE [J].
DUN, H ;
PAN, P ;
WHITE, FR ;
DOUSE, RW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1555-1563
[6]   STRUCTURE AND PROPERTIES OF BORON-NITRIDE FILMS GROWN BY HIGH-TEMPERATURE REACTIVE PLASMA DEPOSITION [J].
HYDER, SB ;
YEP, TO .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1721-1724
[8]   HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].
LANFORD, WA ;
RAND, MJ .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2473-2477
[9]   INSULATION DEGRADATION AND ANOMALOUS ETCHING PHENOMENA IN SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION [J].
MAEDA, M ;
NAKAMURA, H .
THIN SOLID FILMS, 1984, 112 (03) :279-288
[10]   ELECTRICAL-PROPERTIES AND THEIR THERMAL-STABILITY FOR SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION [J].
MAEDA, M ;
ARITA, Y .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6852-6856