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LOW DIELECTRIC-CONSTANT AMORPHOUS SIBN TERNARY FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION
被引:22
作者
:
MAEDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LABS, ATSUGI, KANAGAWA 24301, JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LABS, ATSUGI, KANAGAWA 24301, JAPAN
MAEDA, M
[
1
]
MAKINO, T
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LABS, ATSUGI, KANAGAWA 24301, JAPAN
NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LABS, ATSUGI, KANAGAWA 24301, JAPAN
MAKINO, T
[
1
]
机构
:
[1]
NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
|
1987年
/ 26卷
/ 05期
关键词
:
D O I
:
10.1143/JJAP.26.660
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:660 / 665
页数:6
相关论文
共 23 条
[1]
CHEMICAL-DEPOSITION OF BORON-NITROGEN FILMS
[J].
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
ADAMS, AC
;
CAPIO, CD
论文数:
0
引用数:
0
h-index:
0
CAPIO, CD
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(02)
:399
-405
[2]
OPTICAL PROPERTIES OF THIN BORON NITRIDE FILMS
[J].
BARONIAN, W
论文数:
0
引用数:
0
h-index:
0
BARONIAN, W
.
MATERIALS RESEARCH BULLETIN,
1972,
7
(02)
:119
-&
[3]
HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES
[J].
CHOW, R
论文数:
0
引用数:
0
h-index:
0
机构:
SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
CHOW, R
;
LANFORD, WA
论文数:
0
引用数:
0
h-index:
0
机构:
SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
LANFORD, WA
;
WANG, KM
论文数:
0
引用数:
0
h-index:
0
机构:
SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
WANG, KM
;
ROSLER, RS
论文数:
0
引用数:
0
h-index:
0
机构:
SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
ROSLER, RS
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(08)
:5630
-5633
[4]
Colthup N. B., 1975, INTRO INFRARED RAMAN, P311
[5]
MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE
[J].
DUN, H
论文数:
0
引用数:
0
h-index:
0
DUN, H
;
PAN, P
论文数:
0
引用数:
0
h-index:
0
PAN, P
;
WHITE, FR
论文数:
0
引用数:
0
h-index:
0
WHITE, FR
;
DOUSE, RW
论文数:
0
引用数:
0
h-index:
0
DOUSE, RW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(07)
:1555
-1563
[6]
STRUCTURE AND PROPERTIES OF BORON-NITRIDE FILMS GROWN BY HIGH-TEMPERATURE REACTIVE PLASMA DEPOSITION
[J].
HYDER, SB
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
HYDER, SB
;
YEP, TO
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
YEP, TO
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(11)
:1721
-1724
[7]
SOME PROPERTIES OF SILICON NITRIDE FILMS PRODUCED BY RADIO FREQUENCY GLOW DISCHARGE REACTION OF SILANE AND NITROGEN
[J].
KUWANO, Y
论文数:
0
引用数:
0
h-index:
0
KUWANO, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1969,
8
(07)
:876
-&
[8]
HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE
[J].
LANFORD, WA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
LANFORD, WA
;
RAND, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
RAND, MJ
.
JOURNAL OF APPLIED PHYSICS,
1978,
49
(04)
:2473
-2477
[9]
INSULATION DEGRADATION AND ANOMALOUS ETCHING PHENOMENA IN SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION
[J].
MAEDA, M
论文数:
0
引用数:
0
h-index:
0
MAEDA, M
;
NAKAMURA, H
论文数:
0
引用数:
0
h-index:
0
NAKAMURA, H
.
THIN SOLID FILMS,
1984,
112
(03)
:279
-288
[10]
ELECTRICAL-PROPERTIES AND THEIR THERMAL-STABILITY FOR SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION
[J].
MAEDA, M
论文数:
0
引用数:
0
h-index:
0
MAEDA, M
;
ARITA, Y
论文数:
0
引用数:
0
h-index:
0
ARITA, Y
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(10)
:6852
-6856
←
1
2
3
→
共 23 条
[1]
CHEMICAL-DEPOSITION OF BORON-NITROGEN FILMS
[J].
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
ADAMS, AC
;
CAPIO, CD
论文数:
0
引用数:
0
h-index:
0
CAPIO, CD
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(02)
:399
-405
[2]
OPTICAL PROPERTIES OF THIN BORON NITRIDE FILMS
[J].
BARONIAN, W
论文数:
0
引用数:
0
h-index:
0
BARONIAN, W
.
MATERIALS RESEARCH BULLETIN,
1972,
7
(02)
:119
-&
[3]
HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES
[J].
CHOW, R
论文数:
0
引用数:
0
h-index:
0
机构:
SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
CHOW, R
;
LANFORD, WA
论文数:
0
引用数:
0
h-index:
0
机构:
SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
LANFORD, WA
;
WANG, KM
论文数:
0
引用数:
0
h-index:
0
机构:
SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
WANG, KM
;
ROSLER, RS
论文数:
0
引用数:
0
h-index:
0
机构:
SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
ROSLER, RS
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(08)
:5630
-5633
[4]
Colthup N. B., 1975, INTRO INFRARED RAMAN, P311
[5]
MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE
[J].
DUN, H
论文数:
0
引用数:
0
h-index:
0
DUN, H
;
PAN, P
论文数:
0
引用数:
0
h-index:
0
PAN, P
;
WHITE, FR
论文数:
0
引用数:
0
h-index:
0
WHITE, FR
;
DOUSE, RW
论文数:
0
引用数:
0
h-index:
0
DOUSE, RW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(07)
:1555
-1563
[6]
STRUCTURE AND PROPERTIES OF BORON-NITRIDE FILMS GROWN BY HIGH-TEMPERATURE REACTIVE PLASMA DEPOSITION
[J].
HYDER, SB
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
HYDER, SB
;
YEP, TO
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303
YEP, TO
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(11)
:1721
-1724
[7]
SOME PROPERTIES OF SILICON NITRIDE FILMS PRODUCED BY RADIO FREQUENCY GLOW DISCHARGE REACTION OF SILANE AND NITROGEN
[J].
KUWANO, Y
论文数:
0
引用数:
0
h-index:
0
KUWANO, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1969,
8
(07)
:876
-&
[8]
HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE
[J].
LANFORD, WA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
LANFORD, WA
;
RAND, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
RAND, MJ
.
JOURNAL OF APPLIED PHYSICS,
1978,
49
(04)
:2473
-2477
[9]
INSULATION DEGRADATION AND ANOMALOUS ETCHING PHENOMENA IN SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION
[J].
MAEDA, M
论文数:
0
引用数:
0
h-index:
0
MAEDA, M
;
NAKAMURA, H
论文数:
0
引用数:
0
h-index:
0
NAKAMURA, H
.
THIN SOLID FILMS,
1984,
112
(03)
:279
-288
[10]
ELECTRICAL-PROPERTIES AND THEIR THERMAL-STABILITY FOR SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION
[J].
MAEDA, M
论文数:
0
引用数:
0
h-index:
0
MAEDA, M
;
ARITA, Y
论文数:
0
引用数:
0
h-index:
0
ARITA, Y
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(10)
:6852
-6856
←
1
2
3
→