A LOW-PERMISSIVITY INTERCONNECTION USING AN SIBN INTERLAYER

被引：12

作者：

MAEDA, M

MAKINO, T

YAMAMOTO, EI

KONAKA, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34220

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1610 / 1614

页数：5

共 18 条

[1] MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE [J].

DUN, H ;

PAN, P ;

WHITE, FR ;

DOUSE, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1555-1563

[2]

HORIGUCHI S, 1985, ISSCC, P198

[3]

KONAKA S, 1987, 19TH C SOL STAT DEV, P331

[4] SOME PROPERTIES OF SILICON NITRIDE FILMS PRODUCED BY RADIO FREQUENCY GLOW DISCHARGE REACTION OF SILANE AND NITROGEN [J].

KUWANO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (07) :876-&

[5] INSULATION DEGRADATION AND ANOMALOUS ETCHING PHENOMENA IN SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION [J].

MAEDA, M ;

NAKAMURA, H .

THIN SOLID FILMS, 1984, 112 (03) :279-288

[6] ELECTRICAL-PROPERTIES AND THEIR THERMAL-STABILITY FOR SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION [J].

MAEDA, M ;

ARITA, Y .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6852-6856

[7] LOW DIELECTRIC-CONSTANT AMORPHOUS SIBN TERNARY FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION [J].

MAEDA, M ;

MAKINO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (05) :660-665

[8]

MAEDA M, 1988, S VLSI TECHNOL, P93

[9]

MATSUDA T, 1985, 5TH P EUR C CHEM VAP, P420

[10]

MIYANAGA H, 1984, 16TH C SOL STAT DEV, P225

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