A LOW-PERMISSIVITY INTERCONNECTION USING AN SIBN INTERLAYER

被引：12

作者：

MAEDA, M

MAKINO, T

YAMAMOTO, EI

KONAKA, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34220

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1610 / 1614

页数：5

共 18 条

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[17] PREPARATION AND PROPERTIES OF THIN FILM SILICON-NITROGEN COMPOUNDS PRODUCED BY A RADIO FREQUENCY GLOW DISCHARGE REACTION [J].

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