Bias-voltage Application in Hard X-Ray Photoelectron Spectroscopy for Characterization of Advanced Materials

被引：15

作者：

Yamashita, Yoshiyuki ^{[1
,2
]}

Ohmori, Kenji ^{[3
]}

Ueda, Shigenori ^{[1
]}

Yoshikawa, Hideki ^{[1
]}

Chikyow, Toyohiro ^{[2
]}

Kobayashi, Keisuke ^{[1
]}

机构：

[1] Natl Inst Mat Sci, NIMS, Beamline Stn,SPring-8, Sayo 6795148, Japan

[2] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[3] Waseda Univ, Nano Technol Lab, Tokyo, Tokyo 1620041, Japan

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2010年 / 8卷

关键词：

Crystalline-amorphous interfaces; X-ray photoelectron spectroscopy; Silicon;

D O I：

10.1380/ejssnt.2010.81

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We employed bias-voltage-application in hard x-ray photoelectron spectroscopy(BA-HXPES) to detect electronic states of materials in operating devices. To demonstrate the versatility of this method, we used a metal/SiO2/Si(100) structure as an ideal platform and found that electronic states at the SiO2/Si(100) interface were changed depending on the bias-application to the structure. By analyzing the change as a function of bias-voltage, the interface electronic states in the whole Si gap have been directly obtained in which these states cannot be detected without the bias-application. BA-HXPES is a new method to characterize electronic states for advanced materials under device operation.

引用

页码：81 / 83

页数：3

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