共 7 条
DIELECTRIC CHARACTERISTICS OF FLUORINATED ULTRADRY SIO2
被引:55
作者:

NISHIOKA, Y
论文数: 0 引用数: 0
h-index: 0
机构: UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN

OHJI, Y
论文数: 0 引用数: 0
h-index: 0
机构: UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN

MUKAI, K
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h-index: 0
机构: UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN

SUGANO, T
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h-index: 0
机构: UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN

WANG, Y
论文数: 0 引用数: 0
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机构: UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN

MA, TP
论文数: 0 引用数: 0
h-index: 0
机构: UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
机构:
[1] UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
[2] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
关键词:
D O I:
10.1063/1.101479
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
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页码:1127 / 1129
页数:3
相关论文
共 7 条
- [1] RADIATION RESPONSE OF MOS CAPACITORS CONTAINING FLUORINATED OXIDES[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1190 - 1195DASILVA, EF论文数: 0 引用数: 0 h-index: 0机构: YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520 YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520NISHIOKA, Y论文数: 0 引用数: 0 h-index: 0机构: YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520 YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520MA, TP论文数: 0 引用数: 0 h-index: 0机构: YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520 YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
- [2] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN[J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687DISTEFANO, TH论文数: 0 引用数: 0 h-index: 0机构: IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USASHATZKES, M论文数: 0 引用数: 0 h-index: 0机构: IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
- [3] IMPROVEMENT OF HARDNESS OF MOS CAPACITORS TO ELECTRON-BEAM IRRADIATION AND HOT-ELECTRON INJECTION BY ULTRA-DRY OXIDATION OF SILICON[J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (01) : 27 - 29HARUTA, R论文数: 0 引用数: 0 h-index: 0机构: UNIV TOKYO,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPAN UNIV TOKYO,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPANOHJI, Y论文数: 0 引用数: 0 h-index: 0机构: UNIV TOKYO,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPAN UNIV TOKYO,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPANNISHIOKA, Y论文数: 0 引用数: 0 h-index: 0机构: UNIV TOKYO,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPAN UNIV TOKYO,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPANYOSHIDA, I论文数: 0 引用数: 0 h-index: 0机构: UNIV TOKYO,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPAN UNIV TOKYO,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPANMUKAI, K论文数: 0 引用数: 0 h-index: 0机构: UNIV TOKYO,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPAN UNIV TOKYO,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPANSUGANO, T论文数: 0 引用数: 0 h-index: 0机构: UNIV TOKYO,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPAN UNIV TOKYO,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPAN
- [4] HOT-ELECTRON INDUCED INTERFACE TRAPS IN METAL/SIO2/SI CAPACITORS - THE EFFECT OF GATE-INDUCED STRAIN[J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1208 - 1210HOOK, TB论文数: 0 引用数: 0 h-index: 0MA, TP论文数: 0 引用数: 0 h-index: 0
- [5] DRAMATIC IMPROVEMENT OF HOT-ELECTRON-INDUCED INTERFACE DEGRADATION IN MOS STRUCTURES CONTAINING F OR CL IN SIO2[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) : 38 - 40NISHIOKA, Y论文数: 0 引用数: 0 h-index: 0机构: YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520 YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520DASILVA, EF论文数: 0 引用数: 0 h-index: 0机构: YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520 YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520WANG, Y论文数: 0 引用数: 0 h-index: 0机构: YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520 YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520MA, TP论文数: 0 引用数: 0 h-index: 0机构: YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520 YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
- [6] RADIATION AND HOT-ELECTRON EFFECTS ON SIO2/SI INTERFACES WITH OXIDES GROWN IN O-2 CONTAINING SMALL AMOUNTS OF TRICHLOROETHANE[J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 573 - 575WANG, Y论文数: 0 引用数: 0 h-index: 0机构: YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520 YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520NISHIOKA, Y论文数: 0 引用数: 0 h-index: 0机构: YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520 YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520MA, TP论文数: 0 引用数: 0 h-index: 0机构: YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520 YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520BARKER, RC论文数: 0 引用数: 0 h-index: 0机构: YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520 YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
- [7] SURFACE-CHEMISTRY OF HF PASSIVATED SILICON - X-RAY PHOTOELECTRON AND ION-SCATTERING SPECTROSCOPY RESULTS[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3232 - 3234WEINBERGER, BR论文数: 0 引用数: 0 h-index: 0PETERSON, GG论文数: 0 引用数: 0 h-index: 0ESCHRICH, TC论文数: 0 引用数: 0 h-index: 0KRASINSKI, HA论文数: 0 引用数: 0 h-index: 0