Interface states at ultrathin oxide/Si(111) interfaces obtained from x-ray photoelectron spectroscopy measurements under biases

被引:31
作者
Kobayashi, H
Yamashita, Y
Nakato, Y
Komeda, T
Nishioka, Y
机构
[1] OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN
[2] OSAKA UNIV, RES CTR PHOTOENERGET ORGAN MAT, TOYONAKA, OSAKA 560, JAPAN
[3] TEXAS INSTRUMENTS INC, TSUKUBA RES & DEV CTR LTD, TSUKUBA, IBARAKI 305, JAPAN
关键词
D O I
10.1063/1.117532
中图分类号
O59 [应用物理学];
学科分类号
摘要
The energy distribution of interface states for Si(111)-based metal-oxide-semiconductor (MOS) devices with an ultrathin chemical oxide layer is obtained from measurements of x-ray photoelectron spectra under biases. All the observed interface states have discrete energy levels. The energy deviation of the interface state levels from the midgap is smaller than that for the Si(100)-based MOS devices; this is attributed to weaker interaction of the Si dangling bond with Si and oxygen atoms in the oxide layer. The densities of the interface states at the Si(111)/ultrathin oxide interface are comparable to those at the Si(100)/ultrathin oxide interface. (C) 1996 American Institute of Physics.
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页码:2276 / 2278
页数:3
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