DEPENDENCE OF INTERFACE STATE DENSITY ON THE ATOMIC ROUGHNESS AT THE SI-SIO2 INTERFACE

被引：13

作者：

HAHN, PO ^{[1
]}

YOKOHAMA, S ^{[1
]}

HENZLER, M ^{[1
]}

机构：

[1] UNIV HANOVER, INST FESTKORPERPHYS, D-3000 HANOVER, FED REP GER

来源：

SURFACE SCIENCE | 1984年 / 142卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(84)90361-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：545 / 555

页数：11

共 35 条

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