EVOLUTION OF A NEW SEMICONDUCTOR PRODUCT - MERCURY CADMIUM TELLURIDE FOCAL PLANE ARRAYS

被引：33

作者：

BALCERAK, R ^{[1
]}

GIBSON, JF ^{[1
]}

GUTIERREZ, WA ^{[1
]}

POLLARD, JH ^{[1
]}

机构：

[1] USA, CTR NIGHT VIS & ELECTRO OPT, DIV INFRARED TECHNOL, MAT DEV TEAM, FT BELVOIR, VA 22060 USA

来源：

OPTICAL ENGINEERING | 1987年 / 26卷 / 03期

关键词：

D O I：

10.1117/12.7974050

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：191 / 200

页数：10

共 49 条

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[5] A MODIFIED APPROACH TO ISOTHERMAL GROWTH OF ULTRAHIGH QUALITY HGCDTE FOR INFRARED APPLICATIONS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1171 - 1173
[6] COMPARISON OF HG0.6CD0.4TE LPE LAYER GROWTH FROM TE-RICH, HG-RICH, AND HGTE-RICH SOLUTIONS
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[7] 1.33-MUM HGCDTE-CDTE PHOTO-DIODES
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[J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 318 - 320
[8] HIGH-PERFORMANCE BACKSIDE-ILLUMINATED HG0.78CD0.22TE-CDTE(LAMBDA-CO=10-MU-M) PLANAR DIODES
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[J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 486 - 488
[9] CROISSANCE EPITAXIQUE DE COMPOSES SEMICONDUCTEURS PAR EVAPORATION-DIFFUSION EN REGIME ISOTHERME
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[J]. REVUE DE PHYSIQUE APPLIQUEE, 1966, 1 (01): : 11 - &
[10] EPITAXIAL (CDHG)TE INFRARED PHOTOVOLTAIC DETECTORS
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[J]. APPLIED PHYSICS LETTERS, 1971, 19 (10) : 436 - +

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