1.33-MUM HGCDTE-CDTE PHOTO-DIODES

被引：22

作者：

CHU, M

SHIN, SH

LAW, HD

CHEUNG, DT

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 03期

关键词：

D O I：

10.1063/1.91920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：318 / 320

页数：3

共 15 条

[1] LIQUID-PHASE EPITAXIAL-GROWTH OF CDTE-HG1-XCDXTE MULTILAYERS (0.3 LESS-THAN 0.5) [J].

CHU, M ;

WANG, CC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2255-2257

[2]

CHU M, 1979, DIGEST INT ELECTRON

[3] BE-IMPLANTED 1.3-MUM INGAASP AVALANCHE PHOTODETECTORS [J].

FENG, M ;

OBERSTAR, JD ;

WINDHORN, TH ;

COOK, LW ;

STILLMAN, GE ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1979, 34 (09) :591-593

[4]

HARMAN TC, 1979, J ELECTRON MATER, V8, P191, DOI 10.1007/BF02663272

[5]

HSIEH JJ, 1979, J QUANTUM ELECTRON, V15, P694

[6] GAINASP-INP AVALANCHE PHOTO-DIODES [J].

HURWITZ, CE ;

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :487-489

[7]

LANIR M, 1979, DIGEST INT ELECTRON

[8] III-V ALLOY HETEROSTRUCTURE HIGH-SPEED AVALANCHE PHOTO-DIODES [J].

LAW, HD ;

NAKANO, K ;

TOMASETTA, LR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (07) :549-558

[9] ION-IMPLANTED INGAASP AVALANCHE PHOTO-DIODE [J].

LAW, HD ;

TOMASETTA, LR ;

NAKANO, K .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :920-922

[10] 1.0-1.4-MU-M HIGH-SPEED AVALANCHE PHOTO-DIODES [J].

LAW, HD ;

TOMASETTA, LR ;

NAKANO, K ;

HARRIS, JS .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :416-417

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