BEHAVIOR OF LITHIUM IN SILICON

被引：9

作者：

GUISLAIN, HJ

SCHOENMAEKERS, WK

DELAET, LH

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1972年 / 101卷 / 01期

关键词：

D O I：

10.1016/0029-554X(72)90746-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：1 / +

页数：1

共 26 条

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[19] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON [J].

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