STRESS-FREE AND AMORPHOUS TA4B OR TA8SIB ABSORBERS FOR X-RAY MASKS

被引：10

作者：

SUGAWARA, M

KOBAYASHI, M

YAMAGUCHI, YI

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584489

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1561 / 1564

页数：4

共 8 条

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ITOH, J .

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[4] MICROSTRUCTURE, GROWTH, RESISTIVITY, AND STRESSES IN THIN TUNGSTEN FILMS DEPOSITED BY RF SPUTTERING [J].

PETROFF, P ;

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ROZGONYI, GA ;

ALEXANDER, FB .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2545-2554

[5] INTERNAL STRESSES AND RESISTIVITY OF LOW-VOLTAGE SPUTTERED TUNGSTEN FILMS [J].

SUN, RC ;

TISONE, TC ;

CRUZAN, PD .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1009-1016

[6] ORIGIN OF INTERNAL STRESS IN LOW-VOLTAGE SPUTTERED TUNGSTEN FILMS [J].

SUN, RC ;

TISONE, TC ;

CRUZAN, PD .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :112-117

[7]

URAI M, 1988, 1ST MICR C

[8]

Yanof A. W., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V632, P118, DOI 10.1117/12.963676

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