DEGRADATION OF SOLAR-CELL PERFORMANCE BY AREAL INHOMOGENEITY

被引：22

作者：

LINDHOLM, FA

MAZER, JA

DAVIS, JR

ARREOLA, JI

机构：

[1] WESTINGHOUSE ELECT CORP,CTR RES & DEV,PITTSBURGH,PA 15235

[2] INST NACL ASTROFIS OPT & ELECTR,PUEBLA,MEXICO

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 09期

关键词：

D O I：

10.1016/0038-1101(80)90062-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：967 / 971

页数：5

共 18 条

[11] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[12]

SAH CT, 1979, COMMUNICATION

[13]

SCHWUTTKE G, 1978, COMMUNICATION

[14] OBSERVATIONS OF ANISOTROPIC DIFFUSED LAYER SHEET RESISTANCE IN EFG SILICON RIBBON SOLAR-CELLS [J].

SERREZE, HB ;

RAVI, KV ;

HARIRAO, CV .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :503-505

[15] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+

[16] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489

[17]

Stirn R. J., 1977, 1977 International Electron Devices Meeting, P48, DOI 10.1109/IEDM.1977.189157

[18] INVESTIGATION OF DARK CURRENT AND PHOTOCURRENT SUPERPOSITION IN PHOTO-VOLTAIC DEVICES [J].

TARR, NG ;

PULFREY, DL .

SOLID-STATE ELECTRONICS, 1979, 22 (03) :265-270

← 1 2 →