CURRENT IMAGING TUNNELING SPECTROSCOPY OF METALLIC DEPOSITS ON SILICON

被引：16

作者：

ASENJO, A

GOMEZRODRIGUEZ, JM

BARO, AM

机构：

[1] Departamento de Física de la Materia Condensada, C-III, Universidad Autónoma de Madrid

来源：

ULTRAMICROSCOPY | 1992年 / 42卷

关键词：

D O I：

10.1016/0304-3991(92)90381-S

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

An STM/SEM combined system has been used to perform CITS (Current imaging tunneling spectroscopy) measurements of metallic clusters deposited on silicon. Following a well known method, the deposits were created with STM by applying voltage pulses between tip and sample under a W(CO)6 atmosphere. Spectroscopic plots were then recorded on every point of the sample topography. Apparent barrier-height maps were also measured. Both barrier height and spectroscopic data revealed a different behaviour between clusters and silicon. I-V curves showed metal-like features on the deposits while a typical semiconducting character was found on the substrate.

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页码：933 / 939

页数：7

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