ANOMALOUS RESISTIVITY CHANGE IN B DOPED POLYCRYSTALLINE SI CAUSED BY BN FORMATION UNDER N2 HEAT-TREATMENT

被引：3

作者：

MAKINO, T ^{[1
]}

NAKAMURA, H ^{[1
]}

机构：

[1] NIPPON TELEG & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 10期

关键词：

D O I：

10.1143/JJAP.16.1757

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1757 / 1764

页数：8

共 18 条

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[8] EFFECT OF HEAT-TREATMENT ON RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS [J].

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