MAPPING EVALUATION OF DAMAGE EFFECT ON ELECTRICAL-PROPERTIES OF GAAS SCHOTTKY CONTACTS

被引：28

作者：

SHIOJIMA, K

OKUMURA, T

机构：

[1] Department of Electrical Engineering, Tokyo Metropolitan University, Setagaya-ku, Tokyo, 158, 2-1-1, Fukazawa

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 103卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90194-P

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Scanning internal-photoemission microscopy has been applied to the evaluation of the effect of damage on electrical properties of Schottky contacts on GaAs. The photoyield in the damaged regions increased for n-GaAs and decreased for p-GaAs, whether the damage was a mechanical one or an implantation-induced one. The advantage of this technique has been demonstrated by (a) visualization of the damage effect in a single Schottky contact and (b) detection of an implantation-induced damage at a dose as low as 4 × 1010 cm-2. © 1990.

引用

页码：234 / 242

页数：9

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