INTERCHAIN VACANCY MIGRATION OF GAAS(110)

被引：11

作者：

LENGEL, G ^{[1
]}

WEIMER, M ^{[1
]}

GRYKO, J ^{[1
]}

ALLEN, RE ^{[1
]}

机构：

[1] TEXAS A&M UNIV,DEPT THEORET PHYS,COLLEGE STN,TX 77843

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1994年 / 12卷 / 04期

关键词：

D O I：

10.1116/1.579017

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

At the (110) surface of a III-V semiconductor, the atoms are arranged in zigzag chains. If a surface vacancy is to move to a nearest-neighbor sublattice site, it must migrate within these chains. The scanning-tunneling-microscopy observations reported here, however, demonstrate that As vacancies on GaAs(110) prefer to move between zigzag chains. This phenomenon can be understood in terms of simple bond-breaking and rebonding arguments, and from barrier heights calculated using constrained molecular dynamics.

引用

页码：1855 / 1857

页数：3

共 15 条

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