AN INVESTIGATION OF THE ROUGHENING OF SILICON(100) SURFACES IN CL2 REACTIVE ION ETCHING PLASMAS BY INSITU ELLIPSOMETRY AND QUADRUPOLE MASS-SPECTROMETRY

被引：35

作者：

THOMAS, DJ ^{[1
]}

SOUTHWORTH, P ^{[1
]}

FLOWERS, MC ^{[1
]}

GREEF, R ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,CTR MICROELECTR,DEPT ELECTR & COMP SCI,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1325 / 1332

页数：8

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