POLARIZATION-INSENSITIVE HIGH-CONTRAST GAAS/ALGAAS WAVE-GUIDE MODULATOR BASED ON THE FRANZ-KELDYSH EFFECT

被引：18

作者：

KNUPFER, B ^{[1
]}

KIESEL, P ^{[1
]}

KNEISSL, M ^{[1
]}

DANKOWSKI, S ^{[1
]}

LINDER, N ^{[1
]}

WEIMANN, G ^{[1
]}

DOHLER, GH ^{[1
]}

机构：

[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,W-8046 GARCHING,GERMANY

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 12期

关键词：

D O I：

10.1109/68.262549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a GaAs/AlGaAs p-i-n double heterostructure waveguide modulator based on the Franz-Keldysh effect. Very high on/off ratios up to 40 dB are obtained over a broad range of wavelengths (greater than or equal to 32 dB between 905 nm and 960 nm) while absorption loss in the on-state is very low (<1 cm(-1)). The polarization dependence of the Franz-Keldysh effect is relatively weak and causes only a shift of the transmission-voltage characteristics of TE-polarized light towards higher reverse bias compared to the corresponding TM curves. Therefore, the very high values of the contrast ratio are achievable over the whole range of wavelengths also for arbitrary polarization of the light.

引用

页码：1386 / 1388

页数：3

共 14 条

[1] EXCITON SATURATION IN ELECTRICALLY BIASED QUANTUM-WELLS
FOX, AM
MILLER, DAB
LIVESCU, G
CUNNINGHAM, JE
HENRY, JE
JAN, WY
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (22) : 2315 - 2317
[2] A FIELD-INDUCED GUIDE - ANTIGUIDE MODULATOR ON GAAS-ALGAAS
HUANG, TC
CHUNG, Y
YOUNG, DB
DAGLI, N
COLDREN, LA
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (02) : 141 - 143
[3] KELDYSH LV, 1970, SOV PHYS SEMICOND+, V3, P876
[4] HIGH-SPEED AND HIGH CONTRAST ELECTROOPTICAL MODULATORS BASED ON N-I-P-I DOPING SUPERLATTICES
KIESEL, P
GULDEN, KH
HOFLER, A
KNEISSL, M
KNUPFER, B
LINDER, N
RIEL, P
WU, X
SMITH, JS
DOHLER, GH
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1993, 13 (01) : 21 - 24
[5] KNUPFER B, 1993, APPL PHYS LETT, V62, P2072, DOI 10.1063/1.109482
[6] SEMICONDUCTOR PHOTONIC INTEGRATED-CIRCUITS
KOCH, TL
KOREN, U
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (03) : 641 - 653
[7] GAAS/ALXGA1-XAS SUPERLATTICE WAVE-GUIDE ABSORPTION MODULATORS WITH VERY LOW DRIVE VOLTAGE
MORETTI, AL
VEZZETTI, DJ
CHAMBERS, FA
STAIR, KA
DEVANE, GP
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (06) : 576 - 579
[8] LASER-COMPATIBLE INGAAS/GAAS STRAINED LAYER WAVE-GUIDE ELECTROABSORPTION MODULATORS
MOSS, D
WILLIAMS, RL
DION, M
LANDHEER, D
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (24) : 3139 - 3141
[9] OBSERVATION OF POLARIZATION INDEPENDENT ELECTRIC-FIELD EFFECT IN INGAAS/INP TENSILE STRAINED QUANTUM-WELL AND ITS PROPOSAL FOR OPTICAL SWITCH
RAVIKUMAR, KG
AIZAWA, T
SUZAKI, S
YAMAUCHI, R
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (16) : 1904 - 1906
[10] ELECTROABSORPTION IN ALYGA1-YAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURES
REINHART, FK
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 372 - 374

← 1 2 →