MATERIAL, DEVICE, AND STEP INDEPENDENCE OF THE QUANTIZED HALL RESISTANCE

被引：31

作者：

JECKELMANN, B

INGLIS, AD

JEANNERET, B

机构：

[1] NATL RES COUNCIL CANADA,INST NATL MEASUREMENT STAND,OTTAWA,ON K1A 0R6,CANADA

[2] SWISS FED INST TECHNOL,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1995年 / 44卷 / 02期

关键词：

D O I：

10.1109/19.377828

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report comprehensive high-precision direct and indirect comparisons of quantized Hall resistances in MOSFET and GaAs heterostructures, for steps 1, 2, 3, 4, 6, and 8. We fired no evidence for a step, sample-source, or material dependence of the quantized Hall resistance at the level of 3.5 parts in 10(10).

引用

收藏

页码：269 / 272

页数：4

相关论文

共 11 条

[1] LOW-NOISE MEASUREMENTS OF THE QUANTIZED HALL RESISTANCE USING AN IMPROVED CRYOGENIC CURRENT COMPARATOR BRIDGE [J].

DELAHAYE, F ;

BOURNAUD, D .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1991, 40 (02) :237-240

[2] DIRECT COMPARISON OF THE QUANTIZED HALL RESISTANCE IN GALLIUM-ARSENIDE AND SILICON [J].

HARTLAND, A ;

JONES, K ;

WILLIAMS, JM ;

GALLAGHER, BL ;

GALLOWAY, T .

PHYSICAL REVIEW LETTERS, 1991, 66 (08) :969-973

[3] THE CANADIAN REALIZATION OF A QUANTIZED HALL RESISTANCE STANDARD [J].

INGLIS, AD ;

WOOD, BM ;

YOUNG, B .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1993, 42 (02) :144-147

[4] COMPARISON OF THE QUANTIZED HALL RESISTANCE IN DIFFERENT GAAS/ALXGA1-XAS HETEROSTRUCTURES [J].

JECKELMANN, B ;

SCHWITZ, W ;

BUHLMANN, HJ ;

HOUDRE, R ;

ILEGEMS, M ;

JUCKNISCHKE, D ;

PY, MA .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1991, 40 (02) :231-233

[5] IMPROVEMENTS IN THE REALIZATION OF THE QUANTIZED HALL RESISTANCE STANDARD AT OFMET [J].

JECKELMANN, B ;

FASEL, W ;

JEANNERET, B .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1995, 44 (02) :265-268

[6] QUANTIZED HALL RESISTANCE MEASUREMENTS [J].

KAWAJI, S ;

NAGASHIMA, N ;

KIKUCHI, N ;

WAKABAYASHI, J ;

RICKETTS, BW ;

YOSHIHIRO, K ;

KINOSHITA, J ;

INAGAKI, K ;

YAMANOUCHI, C .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1989, 38 (02) :270-275

[7] RECENT RESULTS OF HIGH MAGNETIC-FIELD EXPERIMENTS ON 2D SYSTEMS - LOCALIZATION AND QUANTIZED HALL RESISTANCE [J].

KAWAJI, S .

PHYSICA B, 1990, 164 (1-2) :50-58

[8] REPORT ON A JOINT BIPM-EUROMET PROJECT FOR THE FABRICATION OF QHE SAMPLES BY THE LEP [J].

PIQUEMAL, F ;

GENEVES, G ;

DELAHAYE, F ;

ANDRE, JP ;

PATILLON, JN ;

FRIJLINK, P .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1993, 42 (02) :264-268

[9] NEW INTERNATIONAL ELECTRICAL REFERENCE-STANDARDS BASED ON THE JOSEPHSON AND QUANTUM HALL-EFFECTS [J].

TAYLOR, BN ;

WITT, TJ .

METROLOGIA, 1989, 26 (01) :47-62

[10] ANOMALOUSLY OFFSET QUANTIZED HALL PLATEAUS IN HIGH-MOBILITY SI-MOSFETS [J].

VANDEGRIFT, CT ;

YOSHIHIRO, K ;

CAGE, ME ;

YU, DY ;

SEGAWA, K ;

KINOSHITA, J ;

ENDO, T .

SURFACE SCIENCE, 1992, 263 (1-3) :116-119