KINETIC PROCESSES IN EPITAXY OF GAXIN1-XAS ON INP(100) BY HYDRIDE VAPOR-PHASE EPITAXY

被引:2
作者
CADORET, M
CHAPUT, L
BANVILLET, H
PORTE, A
PARISET, C
CADORET, R
机构
[1] Laboratoire de Physique des Milieux Condensés, URA CNRS D0796, Université Blaise Pascal-Clermont II
关键词
D O I
10.1016/0040-6090(90)90078-R
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The growth of matched GaxIn1-xAs layers on InP(100) substrates using the hydride method is studied. This paper collects all detected processes that take place in the reactor: surface reactions on the substrate, non-equilibrium reactions in the vapour phase and diffusion in the vapour phase. The experimental results are consistent with the whole model. © 1990.
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页码:343 / 350
页数:8
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