REDUCTION OF INTERFACE STATES AND FABRICATION OF P-CHANNEL INVERSION-TYPE INP-MISFET

被引：35

作者：

OKAMURA, M

KOBAYASHI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 10期

关键词：

D O I：

10.1143/JJAP.19.L599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L599 / L602

页数：4

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