MODELING TEMPERATURE EFFECTS IN THE DC IV CHARACTERISTICS OF GAAS-MESFETS

被引：27

作者：

SELMI, L

RICCO, B

机构：

[1] UNIV BOLOGNA,DEPT ELECTR,I-40136 BOLOGNA,ITALY

[2] UNIV BOLOGNA,DEPT ELECTR & COMP SCI,I-40136 BOLOGNA,ITALY

[3] HEWLETT PACKARD CO,DIV MICROWAVE TECHNOL,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 02期

关键词：

D O I：

10.1109/16.182500

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a simple model to account for the main temperature effects influencing the dc performance of GaAs MESFET's. The model is based on a consistent solution of heat flow and current equations, that accounts for nonuniform power dissipation within the device. The simulation results are satisfactorily compared with experimental data obtained with pulsed and dc measurements performed on conventional devices as well as on suitable test structures.

引用

页码：273 / 277

页数：5

共 14 条

[1] NARROW PULSE MEASUREMENT OF DRAIN CHARACTERISTICS OF GAAS-MESFETS [J].