VARIATION OF VELOCITY/FIELD CURVE OF GAAS IN TEMPERATURE RANGE 40-180 DEGREES C

被引：4

作者：

BOSTOCK, PA

WALSH, D

机构：

[1] Department of Engineering Science, University of Oxford, Oxford, Parks Road

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 24期

关键词：

D O I：

10.1049/el:19690465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-power microwave technique has been used to measure the velocity/field characteristic of GaAs. A small increase in the threshold field has been observed when the temperature was increased from 40 ° to 180 °. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：623 / +

页数：1

共 4 条

[1] MEASUREMENTS OF CURRENT-FIELD STRENGTH CHARACTERISTIC OF N-TYPE GALLIUM ARSENIDE USING VARIOUS HIGH-POWER MICROWAVE TECHNIQUES [J].