TEMPERATURE-INDUCED MANIPULATION OF NUCLEATION DURING SI AND GE MOLECULAR-BEAM EPITAXY

被引：3

作者：

LARSSON, MI

NI, WX

HANSSON, GV

机构：

[1] Department of Physics and Measurement Technology, Linköping University

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.50.5335

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Intermittent-radiant-heating-induced manipulation of nucleation has been accomplished during molecular-beam epitaxy of Si on Si(111) and Ge on Ge(111). Features in the reflection high-energy electron-diffraction intensity were observed that could be related to the evolution of the surface-step density by comparing with Monte Carlo simulations. We report rapid phase shifts of up to 180-degrees effectuated over the growth of one to two bilayers and distinct beat periodicities during layer-by-layer growth conditions. An anomalous phase shift was observed for T(s) close to the step-flow growth regime.

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页码：5335 / 5344

页数：10

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