SYNCHRONIZATION OF NUCLEATION STUDIED WITH MONTE-CARLO SIMULATIONS AND APPLIED TO SI1-XGEX MOLECULAR-BEAM EPITAXY

The method of synchronization of nucleation (SN) by means of periodically altering the substrate temperature has been studied by using a simple Monte Carlo simulation model. The growth simulations were performed on a Si(100)-type geometry. Both an ideal sawtooth-shaped substrate temperature function and a realistic temperature function, which is valid for an indirectly heated substrate, were applied. The results from the simulations with the realistic temperature modulation correspond qualitatively to previously reported experimental data for homoepitaxial growth of Si on Si(111) and Ge on Ge(111) using SN. We predict that correctly applied SN should also improve the 2D character of Si on Si(100) epitaxy. Finally, experimental results on SN applied to heteroepitaxial growth of Si1-xGex are presented.