GENERATION KINETICS OF EL2 CENTERS IN GAAS

被引：11

作者：

SUEZAWA, M ^{[1
]}

SUMINO, K ^{[1
]}

机构：

[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 01期

关键词：

D O I：

10.1143/JJAP.27.L18

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L18 / L20

页数：3

共 10 条

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[9] SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J].

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[10] SUBMILLIMETER ELECTRON-PARAMAGNETIC-RES EVIDENCE FOR THE ARSENIC ANTISITE DEFECT IN GAAS [J].

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