ORIENTATION EFFECTS IN RESISTIVITY OF TA FILMS SPUTTERED IN OXYGEN

被引:13
作者
WESTWOOD, WD
机构
关键词
D O I
10.1063/1.1653392
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:264 / &
相关论文
共 9 条
[1]  
Berry R.W., 1968, THIN FILM TECHNOLOGY
[2]   EFFECTS OF NITROGEN METHANE + OXYGEN ON STRUCTURE + ELECTRICAL PROPERTIES OF THIN TANTALUM FILMS [J].
GERSTENBERG, D ;
CALBICK, CJ .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :402-&
[3]   The Mechanism of Reactive Sputtering [J].
Hollands, E. ;
Campbell, D. S. .
JOURNAL OF MATERIALS SCIENCE, 1968, 3 (05) :544-552
[4]   DEPOSITION OF TANTALUM TANTALUM OXIDE AND TANTALUM NITRIDE WITH CONTROLLED ELECTRICAL CHARACTERISTICS [J].
KRIKORIAN, E ;
SNEED, RJ .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) :3674-+
[5]   THIN FILMS DEPOSITED BY BIAS SPUTTERING [J].
MAISSEL, LI ;
SCHAIBLE, PM .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :237-&
[6]  
Mills D. J, 1966, J CAN CERAM SOC, V35, P48
[7]   A NEW STRUCTURE IN TANTALUM THIN FILMS (VAPOR DEPOSITION SUPERCONDUCTIVITY SPUTTERING X-RAY DIFFRACTION E) [J].
READ, MH ;
ALTMAN, C .
APPLIED PHYSICS LETTERS, 1965, 7 (03) :51-&
[8]  
SCHWARTZ N, T NATIONAL VACUUM S, P325
[9]  
WESTWOOD WD, TO BE PUBLISHED