HIGH-TEMPERATURE EFFECTS ON A COSI2/POLY-SI METAL-OXIDE SEMICONDUCTOR GATE CONFIGURATION

The thermal stability of CoSi2/poly Si on SiO2 was investigated. At temperatures above 750 °C silicon recrystallizes within the silicide layer and the structure approaches inversion, i.e., silicon on top of silicide. With higher temperatures, or longer annealing times, overall grain growth continues until each grain (silicide or silicon) is restricted by the free surface and by the gate oxide interface. These phenomena may limit the applicability of CoSi2 as a dopant diffusion source in, e.g., a salicide technology. © 1990, American Vacuum Society. All rights reserved.