A SELF-ALIGNED COBALT SILICIDE TECHNOLOGY USING RAPID THERMAL-PROCESSING

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 141 - 149

[2] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J]. THIN SOLID FILMS, 1985, 128 (3-4) : 283 - 297

[3] GMELIN L, 1961, HDB INORGANIC CHEM C, VA, P233

[4] APPLICATION OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS TO VERY LARGE-SCALE INTEGRATED N-METAL-OXIDE-SEMICONDUCTOR AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06): : 1657 - 1663

[5] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[6] KINETICS OF COSI2 FROM EVAPORATED SILICON [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (04): : 249 - 251

[7] LUCCHESE CJ, 1982, P ELECTROCHEM SOC M, V827, P232

[8] AN IMPROVED TEST STRUCTURE AND KELVIN-MEASUREMENT METHOD FOR THE DETERMINATION OF INTEGRATED-CIRCUIT FRONT CONTACT RESISTANCE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) : 440 - 443

[9] REACTION OF THIN METAL-FILMS WITH SIO2 SUBSTRATES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (04) : 667 - &

[10] TABASKY M, 1985, UNPUB 1985 MAT RES S

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 141 - 149

[2] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J]. THIN SOLID FILMS, 1985, 128 (3-4) : 283 - 297

[3] GMELIN L, 1961, HDB INORGANIC CHEM C, VA, P233

[4] APPLICATION OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS TO VERY LARGE-SCALE INTEGRATED N-METAL-OXIDE-SEMICONDUCTOR AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06): : 1657 - 1663

[5] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[6] KINETICS OF COSI2 FROM EVAPORATED SILICON [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (04): : 249 - 251

[7] LUCCHESE CJ, 1982, P ELECTROCHEM SOC M, V827, P232

[8] AN IMPROVED TEST STRUCTURE AND KELVIN-MEASUREMENT METHOD FOR THE DETERMINATION OF INTEGRATED-CIRCUIT FRONT CONTACT RESISTANCE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) : 440 - 443

[9] REACTION OF THIN METAL-FILMS WITH SIO2 SUBSTRATES [J]. SOLID-STATE ELECTRONICS, 1978, 21 (04) : 667 - &

[10] TABASKY M, 1985, UNPUB 1985 MAT RES S