CONDUCTION AND SWITCHING PHENOMENA IN THERMALLY GROWN SILICON DIOXIDE FILMS

被引：5

作者：

LAVERTY, SJ

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1971年 / 30卷 / 02期

关键词：

D O I：

10.1080/00207217108900300

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：165 / &

共 11 条

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[5] A NON-FILAMENTARY SWITCHING ACTION IN THERMALLY GROWN SILICON DIOXIDE FILMS [J].

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[9] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES [J].

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[10] NEW CONDUCTION AND REVERSIBLE MEMORY PHENOMENA IN THIN INSULATING FILMS [J].

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