LIGHTLY-DOPED POLYSILICON BRIDGE AS A FLOW METER

被引：33

作者：

TAI, YC ^{[1
]}

MULLER, RS ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

SENSORS AND ACTUATORS | 1988年 / 15卷 / 01期

关键词：

D O I：

10.1016/0250-6874(88)85018-2

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：63 / 75

页数：13

共 16 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

BACCARANI, G ;

RICCO, B ;

SPADINI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570

[2]

CEBECI T, 1982, PHYSICAL COMPUTATION

[3] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].

KAMINS, TI .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4357-&

[4]

KORSH GJ, 1978, SOLID STATE ELECTRON, V21, P1045, DOI 10.1016/0038-1101(78)90183-1

[5] MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS [J].

LU, NCC ;

GERZBERG, L ;

LU, CY ;

MEINDL, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :818-830

[6]

MACKLEN ED, 1979, THERMISTORS, P39

[7] A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .1. THEORY [J].

MANDURAH, MM ;

SARASWAT, KC ;

KAMINS, TI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1163-1171

[8] A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .2. COMPARISON OF THEORY AND EXPERIMENT [J].

MANDURAH, MM ;

SARASWAT, KC ;

KAMINS, TI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1171-1176

[9] PHOSPHORUS DOPING OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS [J].

MANDURAH, MM ;

SARASWAT, KC ;

KAMINS, TI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :1019-1023

[10]

PETERSEN K, 1985, 3RD INT C SOL STAT S

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