SPECTROSCOPIC STUDIES OF THE INFLUENCE OF OXYGEN PARTIAL-PRESSURE ON THE INCORPORATION OF RESIDUAL SILICON IMPURITIES IN VAPOR-PHASE EPITAXIAL GALLIUM-ARSENIDE

被引：6

作者：

LEE, B ^{[1
]}

ARAI, K ^{[1
]}

SKROMME, BJ ^{[1
]}

BOSE, SS ^{[1
]}

ROTH, TJ ^{[1
]}

AGUILAR, JA ^{[1
]}

LEPKOWSKI, TR ^{[1
]}

TIEN, NC ^{[1
]}

STILLMAN, GE ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.344040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3772 / 3786

页数：15

共 50 条

[1] ON PREPARATION OF HIGH PURITY GALLIUM ARSENIDE [J].

AINSLIE, NG ;

WOODS, JF ;

BLUM, SE .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) :2391-&

[2]

ALEKSANDROVA GA, 1973, SOV PHYS SEMICOND+, V6, P1170

[3] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[4] ENERGY-LEVEL MODEL FOR HIGH-RESISTIVITY GALLIUM ARSENIDE [J].

BLANC, J ;

WEISBERG, LR .

NATURE, 1961, 192 (479) :155-&

[5]

BOBYLEV BA, 1979, SOV PHYS SEMICOND+, V13, P1199

[6] REACTIONS OF GALLIUM WITH QUARTZ AND WITH WATER VAPOR, WITH IMPLICATIONS IN THE SYNTHESIS OF GALLIUM ARSENIDE [J].

COCHRAN, CN ;

FOSTER, LM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) :149-154

[7] LOW COMPENSATION VAPOR-PHASE EPITAXIAL GALLIUM-ARSENIDE [J].

COLTER, PC ;

LOOK, DC ;

REYNOLDS, DC .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :282-284

[8]

DEVEAUD B, 1978, I PHYS C SER, V45, P492

[9] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J].

DILORENZO, JV ;

MOORE, GE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1823-+

[10] SEMI-INSULATING LAYERS OF GAAS BY OXYGEN IMPLANTATION [J].

FAVENNEC, PN .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2532-2536

← 1 2 3 4 5 →