MAGNETOSTRICTION IN FETAN THIN-FILMS

Magnetostriction has been studied in FeTaN single layer thin films deposited by high power density, high growth rate, dc magnetron sputtering. Magnetostriction was found to increase linearly with the nitrogen content of the films, passing from negative to positive with increasing nitrogen content. Thinner films exhibited larger positive magnetostriction than thicker films deposited at the same nitrogen flow rate. Film stress was found to be tensile in as-deposited films grown at zero nitrogen pressure. As the nitrogen content in the films increased, the film stress changed from tensile to compressive and increased in magnitude while annealing at 300-degrees-C reduced the magnitude of film stress without affecting magnetostriction. Stress anisotropy was found to reach a minimum at low nitrogen flow rate, and stripe domain formation accompanied large stress anisotropy at high nitrogen flow rates.