EFFECT OF NITROGEN DISTRIBUTION IN NITRIDED OXIDE PREPARED BY RAPID THERMAL ANNEALING ON ITS ELECTRICAL CHARACTERISTICS

被引：19

作者：

NAITO, Y

HORI, T

IWASAKI, H

ESAKI, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583796

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：633 / 637

页数：5

共 19 条

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[3]

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[5]

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[7] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J].

ITO, T ;

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[8]

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[9] RAPID THERMAL NITRIDATION OF SIO2 FOR NITROXIDE THIN DIELECTRICS [J].

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[10] THERMAL NITRIDATION OF SI AND SIO2 FOR VLSI [J].

MOSLEHI, MM ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :106-123

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