CHARACTERIZATION OF CDTE, (CD,ZN)TE, AND CD(TE,SE)SINGLE CRYSTALS BY TRANSMISSION ELECTRON-MICROSCOPY

被引：38

作者：

RAI, RS ^{[1
]}

MAHAJAN, S ^{[1
]}

MCDEVITT, S ^{[1
]}

JOHNSON, CJ ^{[1
]}

机构：

[1] II-VI INC,SAXONBURG,PA 16056

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 03期

关键词：

D O I：

10.1116/1.585377

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CdTe, (CD,Zn)Te, and Cd(Te,Se) crystals grown by the Bridgman technique have been characterized by transmission electron microscopy. Results indicate that the Te precipitates are seen in all the crystals, but their density and size are lowest and largest in the case of Cd(Te,Se) crystals. In addition, dislocations, stacking faults, and microtwins are observed in as-grown CdTe, (Cd,Zn)Te, and Cd(Te,Se) crystals. Arguments have been developed to rationalize these observations and their ramifications on crystal perfection are discussed.

引用

页码：1892 / 1896

页数：5

共 18 条

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