THE SUBLINEAR RELATIONSHIP BETWEEN INDEX CHANGE AND CARRIER DENSITY IN 1.5-MU-M AND 1.3-MU-M SEMICONDUCTOR-LASERS

被引：7

作者：

SHIN, S

SU, CB

机构：

[1] Department of Electrical Engineering, Texas A&M University, College Station

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.141958

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The carrier-induced index change was measured using a novel injection-reflection technique in combination with differential carrier lifetime data. The observed relation between index change and injected carrier density at bandgap wavelength is nonlinear and is approximately given by delta-n(act) = -6.1 x 10(-14) (N)0.66 for 1.5-mu-m laser and delta-n(act) = -1.3 X 10(-14) (N)0.68 for 1.3-mu-m laser. The carrier-induced index change for a 1.3-mu-m laser at 1.53-mu-m wavelength is smaller and is given by delta-n(act) = -9.2 X 10(-16) (N)0.72.

引用

收藏

页码：534 / 537

页数：4

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