学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
NITRIDATION-ENHANCED CONDUCTIVITY BEHAVIOR AND CURRENT TRANSPORT MECHANISM IN THIN THERMALLY NITRIDED SIO2
被引:80
作者
:
CHENG, XR
论文数:
0
引用数:
0
h-index:
0
CHENG, XR
CHENG, YC
论文数:
0
引用数:
0
h-index:
0
CHENG, YC
LIU, BY
论文数:
0
引用数:
0
h-index:
0
LIU, BY
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1988年
/ 63卷
/ 03期
关键词
:
D O I
:
10.1063/1.340072
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:797 / 802
页数:6
相关论文
共 18 条
[1]
CAPTURE AND TUNNEL EMISSION OF ELECTRONS BY DEEP LEVELS IN ULTRATHIN NITRIDED OXIDES ON SILICON
CHANG, ST
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
CHANG, ST
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
JOHNSON, NM
LYON, SA
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
LYON, SA
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(03)
: 316
-
318
[2]
ANALYSIS OF CURRENT TRANSPORT AND CHARGE TRAPPING IN ULTRATHIN NITRIDED OXIDE MIS CAPACITORS
CHANG, ST
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
CHANG, ST
LYON, SA
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
LYON, SA
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
JOHNSON, NM
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(12)
: 1972
-
1972
[3]
HOLE INJECTION INTO SILICON-NITRIDE - INTERFACE BARRIER ENERGIES BY INTERNAL PHOTOEMISSION
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DIMARIA, DJ
ARNETT, PC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ARNETT, PC
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(12)
: 711
-
713
[4]
FOWLER-NORDHEIM ELECTRON-TUNNELING IN THIN SI-SIO2-AL STRUCTURES
KRIEGER, G
论文数:
0
引用数:
0
h-index:
0
KRIEGER, G
SWANSON, RM
论文数:
0
引用数:
0
h-index:
0
SWANSON, RM
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(09)
: 5710
-
5717
[5]
LAI SK, 1983, 1983 INT EL DEV M WA, P190
[6]
LAI SK, 1982, J ELECTROCHEM SOC, V129, P2024
[7]
FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
LENZLINGER, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
LENZLINGER, M
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
SNOW, EH
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(01)
: 278
-
+
[8]
LUNDSTROM I, 1971, J APPL PHYS, V43, P5045
[9]
THERMAL NITRIDATION OF SI AND SIO2 FOR VLSI
MOSLEHI, MM
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Integrated Circuits, Lab, Stanford, CA, USA, Stanford Univ, Integrated Circuits Lab, Stanford, CA, USA
MOSLEHI, MM
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Integrated Circuits, Lab, Stanford, CA, USA, Stanford Univ, Integrated Circuits Lab, Stanford, CA, USA
SARASWAT, KC
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1985,
20
(01)
: 26
-
43
[10]
COMPOSITIONAL STUDIES OF THERMALLY NITRIDED SILICON DIOXIDE (NITROXIDE)
MOSLEHI, MM
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Integrated Circuits, & Solid State Lab, Stanford, CA,, USA, Stanford Univ, Integrated Circuits & Solid State Lab, Stanford, CA, USA
MOSLEHI, MM
HAN, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Integrated Circuits, & Solid State Lab, Stanford, CA,, USA, Stanford Univ, Integrated Circuits & Solid State Lab, Stanford, CA, USA
HAN, CJ
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Integrated Circuits, & Solid State Lab, Stanford, CA,, USA, Stanford Univ, Integrated Circuits & Solid State Lab, Stanford, CA, USA
SARASWAT, KC
HELMS, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Integrated Circuits, & Solid State Lab, Stanford, CA,, USA, Stanford Univ, Integrated Circuits & Solid State Lab, Stanford, CA, USA
HELMS, CR
SHATAS, S
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Integrated Circuits, & Solid State Lab, Stanford, CA,, USA, Stanford Univ, Integrated Circuits & Solid State Lab, Stanford, CA, USA
SHATAS, S
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(09)
: 2189
-
2197
←
1
2
→
共 18 条
[1]
CAPTURE AND TUNNEL EMISSION OF ELECTRONS BY DEEP LEVELS IN ULTRATHIN NITRIDED OXIDES ON SILICON
CHANG, ST
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
CHANG, ST
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
JOHNSON, NM
LYON, SA
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
LYON, SA
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(03)
: 316
-
318
[2]
ANALYSIS OF CURRENT TRANSPORT AND CHARGE TRAPPING IN ULTRATHIN NITRIDED OXIDE MIS CAPACITORS
CHANG, ST
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
CHANG, ST
LYON, SA
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
LYON, SA
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
JOHNSON, NM
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(12)
: 1972
-
1972
[3]
HOLE INJECTION INTO SILICON-NITRIDE - INTERFACE BARRIER ENERGIES BY INTERNAL PHOTOEMISSION
DIMARIA, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DIMARIA, DJ
ARNETT, PC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ARNETT, PC
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(12)
: 711
-
713
[4]
FOWLER-NORDHEIM ELECTRON-TUNNELING IN THIN SI-SIO2-AL STRUCTURES
KRIEGER, G
论文数:
0
引用数:
0
h-index:
0
KRIEGER, G
SWANSON, RM
论文数:
0
引用数:
0
h-index:
0
SWANSON, RM
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(09)
: 5710
-
5717
[5]
LAI SK, 1983, 1983 INT EL DEV M WA, P190
[6]
LAI SK, 1982, J ELECTROCHEM SOC, V129, P2024
[7]
FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2
LENZLINGER, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
LENZLINGER, M
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto
SNOW, EH
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(01)
: 278
-
+
[8]
LUNDSTROM I, 1971, J APPL PHYS, V43, P5045
[9]
THERMAL NITRIDATION OF SI AND SIO2 FOR VLSI
MOSLEHI, MM
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Integrated Circuits, Lab, Stanford, CA, USA, Stanford Univ, Integrated Circuits Lab, Stanford, CA, USA
MOSLEHI, MM
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Integrated Circuits, Lab, Stanford, CA, USA, Stanford Univ, Integrated Circuits Lab, Stanford, CA, USA
SARASWAT, KC
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1985,
20
(01)
: 26
-
43
[10]
COMPOSITIONAL STUDIES OF THERMALLY NITRIDED SILICON DIOXIDE (NITROXIDE)
MOSLEHI, MM
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Integrated Circuits, & Solid State Lab, Stanford, CA,, USA, Stanford Univ, Integrated Circuits & Solid State Lab, Stanford, CA, USA
MOSLEHI, MM
HAN, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Integrated Circuits, & Solid State Lab, Stanford, CA,, USA, Stanford Univ, Integrated Circuits & Solid State Lab, Stanford, CA, USA
HAN, CJ
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Integrated Circuits, & Solid State Lab, Stanford, CA,, USA, Stanford Univ, Integrated Circuits & Solid State Lab, Stanford, CA, USA
SARASWAT, KC
HELMS, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Integrated Circuits, & Solid State Lab, Stanford, CA,, USA, Stanford Univ, Integrated Circuits & Solid State Lab, Stanford, CA, USA
HELMS, CR
SHATAS, S
论文数:
0
引用数:
0
h-index:
0
机构:
Stanford Univ, Integrated Circuits, & Solid State Lab, Stanford, CA,, USA, Stanford Univ, Integrated Circuits & Solid State Lab, Stanford, CA, USA
SHATAS, S
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(09)
: 2189
-
2197
←
1
2
→