DOSE DEPENDENCE OF MOSSBAUER-SPECTRA OF ION-IMPLANTED CO-57 AND FE-57 IN SILICON

被引：10

作者：

DAMGAARD, S ^{[1
]}

PETERSEN, JW ^{[1
]}

WEYER, G ^{[1
]}

HOLCK, O ^{[1
]}

机构：

[1] NIELS BOHR INST,COPENHAGEN,DENMARK

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 58卷 / 02期

关键词：

D O I：

10.1002/pssa.2210580215

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：443 / 449

页数：7

共 16 条

[1]

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COUSSEMENT, R .

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[4] EXISTENCE OF A QUADRUPOLE INTERACTION AT FE-57 IMPLANTED IN SI AND GE [J].

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DEZSI, I ;

VANROSSUM, M ;

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COUSSEMENT, R .

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[5]

Latshaw G. L., 1971, THESIS STANFORD U

[6]

Mayer J. W., 1970, ION IMPLANTATION SEM

[7]

Milnes A., 1973, DEEP IMPURITIES SEMI

[8] EVIDENCE OF ELECTRIC QUADRUPOLE COUPLING OF FE-57 IMPLANTED IN SILICON [J].

SAWICKA, BD ;

SAWICKI, JA .

PHYSICS LETTERS A, 1977, 64 (03) :311-312

[9]

SAWICKA BD, 1976, J PHYSIQUE, V37, P879

[10] MOSSBAUER STUDY OF HEAT-TREATED FE-57 IMPLANTED SILICON [J].

SAWICKI, J ;

SAWICKA, B ;

STANEK, J ;

KOWALSKI, J .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 77 (01) :K1-K4

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