NONUNIFORMITY IN VOID CONCENTRATION BETWEEN THE INITIAL AND FINAL GROWTH STAGE OF SPUTTERED A-GE FILMS STUDIED USING SPECTROSCOPIC ELLIPSOMETRY

被引：7

作者：

YANG, B

PILIONE, LJ

YEHODA, JE

VEDAM, K

MESSIER, R

机构：

[1] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802

[2] PENN STATE UNIV,DEPT PHYS,ALTOONA,PA 16603

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.36.6206

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6206 / 6208

页数：3

共 20 条

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[7] A SPECTROSCOPIC ELLIPSOMETRY STUDY OF THE NUCLEATION AND GROWTH OF PLASMA-DEPOSITED AMORPHOUS-SILICON
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[9] THICKNESS-DEPENDENT VOID FRACTION OF RF-SPUTTERED AMORPHOUS-GE FILMS BY SPECTROSCOPIC ELLIPSOMETRY
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PILIONE, L
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (06) : 328 - 330
[10] MCMARR PJ, UNPUB

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