PHOTOTHERMAL IONIZATION SPECTROSCOPY OF OXYGEN-RELATED SHALLOW DEFECTS IN CRYSTALLINE SILICON

被引:34
作者
GRIFFIN, JA [1 ]
HARTUNG, J [1 ]
WEBER, J [1 ]
NAVARRO, H [1 ]
GENZEL, L [1 ]
机构
[1] UNIV AUTONOMA PUEBLA,DEPT FISICA ICUAP,PUEBLA 72570,PUEBLA,MEXICO
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 48卷 / 01期
关键词
D O I
10.1007/BF00617762
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:41 / 47
页数:7
相关论文
共 17 条
[1]   ANALYSIS OF PHOTOTHERMAL IONIZATION SPECTRA OF SHALLOW IMPURITIES IN SILICON [J].
BAMBAKIDIS, G ;
BROWN, GJ .
PHYSICAL REVIEW B, 1986, 33 (12) :8180-8187
[2]   HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].
FAULKNER, RA .
PHYSICAL REVIEW, 1969, 184 (03) :713-&
[3]  
GRIFFIN J, 1987, THESIS U BATH GB
[4]   THE NEW SHALLOW THERMAL DONOR SERIES IN SILICON [J].
GRIFFIN, JA ;
NAVARRO, H ;
WEBER, J ;
GENZEL, L ;
BORENSTEIN, JT ;
CORBETT, JW ;
SNYDER, LC .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (26) :L579-L584
[5]  
GRIFFIN JA, 1986, 14TH P INT C DEF SEM, P997
[6]   PHOTOTHERMAL IONIZATION SPECTROSCOPY [J].
HALLER, EE ;
HANSEN, WL ;
GOULDING, FS .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, NS22 (01) :127-134
[7]   EXCITATION-SPECTRA AND PIEZOSPECTROSCOPIC EFFECTS OF MAGNESIUM DONORS IN SILICON [J].
HO, LT ;
RAMDAS, AK .
PHYSICAL REVIEW B, 1972, 5 (02) :462-&
[8]   HIGH-RESOLUTION STUDIES OF SULFUR-RELATED AND SELENIUM-RELATED DONOR CENTERS IN SILICON [J].
JANZEN, E ;
STEDMAN, R ;
GROSSMANN, G ;
GRIMMEISS, HG .
PHYSICAL REVIEW B, 1984, 29 (04) :1907-1918
[9]   MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].
KAISER, W ;
FRISCH, HL ;
REISS, H .
PHYSICAL REVIEW, 1958, 112 (05) :1546-1554
[10]  
KAISER W, 1986, MRS S P, V59