SEMICONDUCTOR HETEROJUNCTION INTERFACES - NONTRANSITIVITY OF ENERGY-BAND DISCONTINUITIES

被引：89

作者：

WALDROP, JR

GRANT, RW

机构：

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 43卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.43.1686

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A direct experimental test has revealed that heterojunction energy-band discontinuities are nontransitive. This result was obtained by an x-ray photoemission-spectroscopy investigation of abrupt (110) interfaces in the heterojunction series Ge/CuBr, CuBr/GaAs, and GaAs/Ge. The sum of the valence-band discontinuities for these intefaces is 0.64 ± 0.05 eV, a large deviation from the zero sum expected by transitivity. © 1979 The American Physical Society.

引用

页码：1686 / 1689

页数：4

共 12 条

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