SELF-CONSISTENT CALCULATION OF THE ELECTRONIC-STRUCTURE OF THE (110) GAAS-ZNSE INTERFACE

被引：45

作者：

IHM, J ^{[1
]}

COHEN, ML ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB, DIV MAT & MOLEC RES, BERKELEY, CA 94720 USA

来源：

PHYSICAL REVIEW B | 1979年 / 20卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.20.729

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The abrupt (110) interface of GaAs-ZnSe is studied using the self-consistent pseudopotential method. No interface states are found in the fundamental gap, but interface states do split off from bulk states in some other regions. The band-edge discontinuity found in the present calculation does not satisfy the simple electron affinity rule; the calculated discontinuity of the conduction-band minima is 0.7 eV compared with the electron-affinity difference of 0.02 eV. The role of ionicity in the electronic structure of the interface is discussed. © 1979 The American Physical Society.

引用

页码：729 / 733

页数：5

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