RAMAN-SCATTERING OF AMORPHOUS-CARBON SEMICONDUCTOR INTERFACE LAYERS

被引：27

作者：

RAMSTEINER, M

WAGNER, J

WILD, C

KOIDL, P

机构：

[1] Fraunhofer-Inst fuer Angewandte, Festkoerperphysik, Freiburg, West, Ger, Fraunhofer-Inst fuer Angewandte Festkoerperphysik, Freiburg, West Ger

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 67卷 / 01期

关键词：

D O I：

10.1016/0038-1098(88)90005-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：15 / 18

页数：4

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[10] DEPTH PROFILE ANALYSIS OF HYDROGENATED CARBON LAYERS ON SILICON BY X-RAY PHOTOELECTRON-SPECTROSCOPY, AUGER-ELECTRON SPECTROSCOPY, ELECTRON ENERGY-LOSS SPECTROSCOPY, AND SECONDARY ION MASS-SPECTROMETRY [J].

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