75TH ANNIVERSARY REVIEW SERIES - COMPOUND SEMICONDUCTORS

[81] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &

[82] KOLBAS RM, 1978, SOV TECH PHYS LETT, V4

[83] GRADED-BAND-GAP PGA1-XALXAS-NGAAS HETEROJUNCTION SOLAR CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3542 - 3546

[84] KRESSEL H, 1978, SEMICONDUCTOR LASERS

[85] THEORY OF GUNN EFFECT [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1736 - &

[86] KRUSE PW, 1970, SEMICONDUCT SEMIMET, V5, P15

[87] LAW HD, 1978, TOPICAL M INTEGRATED

[88] GAAS SCHOTTKY BARRIER AVALANCHE PHOTODIODES [J]. APPLIED PHYSICS LETTERS, 1969, 14 (06) : 197 - +

[89] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 242 - 244

[90] EFFICIENT GREEN ELECTROLUMINESCENT JUNCTIONS IN GAP [J]. SOLID-STATE ELECTRONICS, 1971, 14 (01) : 55 - &

[81] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &

[82] KOLBAS RM, 1978, SOV TECH PHYS LETT, V4

[83] GRADED-BAND-GAP PGA1-XALXAS-NGAAS HETEROJUNCTION SOLAR CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3542 - 3546

[84] KRESSEL H, 1978, SEMICONDUCTOR LASERS

[85] THEORY OF GUNN EFFECT [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1736 - &

[86] KRUSE PW, 1970, SEMICONDUCT SEMIMET, V5, P15

[87] LAW HD, 1978, TOPICAL M INTEGRATED

[88] GAAS SCHOTTKY BARRIER AVALANCHE PHOTODIODES [J]. APPLIED PHYSICS LETTERS, 1969, 14 (06) : 197 - +

[89] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 242 - 244

[90] EFFICIENT GREEN ELECTROLUMINESCENT JUNCTIONS IN GAP [J]. SOLID-STATE ELECTRONICS, 1971, 14 (01) : 55 - &