VLSI PROCESSING, RADIATION, AND HARDENING

[1] Aitken J., COMMUNICATION

[2] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[3] AVALANCHE INJECTION OF HOLES INTO SIO2 [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2128 - 2134

[4] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[5] AITKEN JM, 1978, 20TH ANN EL MAT C SA

[6] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +

[7] AUBUCHON KG, 1971, N0001471C0079 CONTR

[8] BELL AT, 1978, SOLID STATE TECHNOL, V21, P89

[9] FABRICATION OF SILICON MOS DEVICES USING X-RAY LITHOGRAPHY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) : 421 - 428

[10] CHANG THP, 1977, ELECTRONICS, V50, P89

[1] Aitken J., COMMUNICATION

[2] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[3] AVALANCHE INJECTION OF HOLES INTO SIO2 [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2128 - 2134

[4] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[5] AITKEN JM, 1978, 20TH ANN EL MAT C SA

[6] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +

[7] AUBUCHON KG, 1971, N0001471C0079 CONTR

[8] BELL AT, 1978, SOLID STATE TECHNOL, V21, P89

[9] FABRICATION OF SILICON MOS DEVICES USING X-RAY LITHOGRAPHY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) : 421 - 428

[10] CHANG THP, 1977, ELECTRONICS, V50, P89