EFFECTS OF V/III RATIO ON ELECTRONIC AND OPTICAL-PROPERTIES OF GAINAS LAYERS GROWN BY MOCVD

被引：16

作者：

KAMADA, M

ISHIKAWA, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 94卷 / 04期

关键词：

D O I：

10.1016/0022-0248(89)90117-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：849 / 856

页数：8

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[4] HIGH-TRANSCONDUCTANCE ALLNAS/GAINAS HIFETS GROWN BY MOCVD
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[5] W/WSI GATE SELF-ALIGNED HIFETS (HETEROINTERFACE FETS) USING AN ALINAS/GAINAS HETEROSTRUCTURE GROWN BY MOCVD
KAMADA, M
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KANEKO, K
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[J]. ELECTRONICS LETTERS, 1988, 24 (05) : 271 - 272
[6] MOCVD GROWTH OF SELECTIVELY DOPED ALLNAS/GALNAS HETEROSTRUCTURES AND ITS APPLICATION TO HIFETS (HETEROINTERFACE FETS)
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IKEDA, M
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