OPTICAL MODULATION SPECTROSCOPY OF DANGLING BONDS IN A-SI-H

被引：18

作者：

GREVENDONK, W ^{[1
]}

VERLUYTEN, M ^{[1
]}

DAUWEN, J ^{[1
]}

ADRIAENSSENS, GJ ^{[1
]}

BEZEMER, J ^{[1
]}

机构：

[1] STATE UNIV UTRECHT,DEPT ATOM & INTERFACE PHYS,3508 TA UTRECHT,NETHERLANDS

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1990年 / 61卷 / 03期

关键词：

D O I：

10.1080/13642819008208642

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical modulation spectroscopy in a-Si:H at room temperature has been studied for six samples, deposited at different substrate temperatures Ts and hence containing different amounts of hydrogen. The experimental results can be described with one photoinduced absorption and one photoinduced bleaching term. The transition energies are independent of Ts so that it may be concluded that mainly dangling bonds and the conduction band are involved. The negatively charged dangling bond D-is situated 0.85 eV below the conduction-band edge. The neutral D° lies 1.25 eV below that edge. It can be argued that these values are not necessarily in conflict with the experimental value (0.75 eV) for the dark-current activation energy. © 1990 Taylor & Francis Ltd.

引用

页码：393 / 402

页数：10

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